Apparent pH sensitivity of solution-gated graphene transistors.
نویسندگان
چکیده
Solution-gated graphene transistors were developed recently for use in pH sensor applications. The device operation is understood to rely on the capability of hydronium and hydroxide ions in solution to change the electrical properties of graphene. However, hydronium and hydroxide ions are accompanied by other ionic species in a typical acidic or basic solution and, therefore, the roles of these other ionic species must be also considered to fully understand the pH response of such devices. Using series of pH buffer solutions designed carefully, we verified that the magnitude and even the direction of pH-dependent Dirac voltage (VDirac) shift (the typical pH sensing indicator) depend strongly on the concentration and composition of the buffers used. The results indicate that the interpretation of the apparent pH-dependent VDirac response of a solution-gated graphene transistor must include the contributions of the additional ions in the solution.
منابع مشابه
Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing
Articles you may be interested in Publisher's Note: " Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing " [Appl. pH sensing properties of graphene solution-gated field-effect transistors Detection of sulfur dioxide gas with graphene field effect transistor Appl. Probing transconductance spatial variation...
متن کاملHighly sensitive glucose sensors based on enzyme-modified whole-graphene solution-gated transistors
Noninvasive glucose detections are convenient techniques for the diagnosis of diabetes mellitus, which require high performance glucose sensors. However, conventional electrochemical glucose sensors are not sensitive enough for these applications. Here, highly sensitive glucose sensors are successfully realized based on whole-graphene solution-gated transistors with the graphene gate electrodes...
متن کاملpH Effect on the Size of Graphene Quantum dot Synthesized by Using Pulse Laser Irradiation
In this study graphene oxide (GO) was synthesized by using Hummer’s method. Low dimension graphene quantum dot nanoparticles (GQDs) were synthesized using pulse laser irradiation. Fourier Transform-Infrared Spectroscopy (FTIR), Ultraviolet-Visible (UV-Vis) spectroscopy and photoluminescence (PL) analysis were applied to study the GQDs characteristic. Scanning electron microscopy illustrated the...
متن کاملElectrolyte-Gated Graphene Field-Effect Transistors: Modeling
This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated through experimental graphene EGFETs, which were fabricated and measured to provide experimental data and extract graphene EGFET parameters such as mobility, minimum carrier conce...
متن کاملEdge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors
We report the pH response enhancement of the electrolyte-gated graphene field effect transistors by controllably introducing edge defects. An average improvement of pH response from 4.2 to 24.6 mV/pH has been observed after downscaling the pristine graphene into graphene nanoribbon arrays with electron beam lithography (EBL) and oxygen plasma. We attribute the improved pH response in graphene n...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Nanoscale
دوره 7 17 شماره
صفحات -
تاریخ انتشار 2015